Gyeonggi-do, South Korea

Xiao Quan Wang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiao Quan Wang. Retrieved from https://idiyas.com/inventor/xiao-quan-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 3.0

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Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Innovations of Xiao Quan Wang in Semiconductor Technology

Introduction

Xiao Quan Wang is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Wang holds a patent for "Semiconductor devices including resistor elements comprising a bridge and base elements and related methods." This patent describes a semiconductor device that includes a resistance pattern on a substrate. The resistance pattern features first and second spaced apart base elements, a bridge element, and several extension elements. This design allows for improved functionality and integration in semiconductor applications.

Career Highlights

Wang is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him at the forefront of semiconductor innovation. With a focus on developing cutting-edge technologies, he continues to contribute to advancements in the industry.

Collaborations

Wang has collaborated with talented colleagues, including Chang-Bong Oh and Seung-Hwan Lee. These partnerships have fostered a creative environment that encourages the exchange of ideas and expertise.

Conclusion

Xiao Quan Wang's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Samsung Electronics Co., Ltd. highlight his commitment to advancing the field. Through collaboration and creativity, he continues to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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