Xiangyu Yang

Title: Innovations of Xiangyu Yang in Memory Device Technology

Introduction

Xiangyu Yang is a notable inventor based in San Jose, CA, who has made significant contributions to the field of memory device technology. With a total of 2 patents, his work focuses on enhancing the performance and reliability of memory devices.

Latest Patents

Xiangyu Yang's latest patents include innovative methods to improve read recovery processes in memory devices. One patent describes "Early discharge sequences during read recovery to alleviate latent read disturb." This invention involves a memory device that includes a memory array and control logic, which initiates a read recovery process associated with a block of the memory array. The operations include performing an early discharge sequence on a first set of wordlines during the read recovery process to alleviate latent read disturb. The early discharge sequence ramps the first set of wordlines from an initial voltage to a ramping voltage while maintaining a second set of wordlines at the initial voltage.

Another patent, titled "Unselected sub-block source line and bit line pre-charging to reduce read disturb," outlines a memory device that includes an unselected sub-block with a bit line and transistors coupled with the bit line. The control logic causes the transistors to turn on while ramping the wordlines from a ground voltage to a pass voltage in preparation for a read operation. This process pre-charges the channel by ramping voltages on the bit line and source voltage line to a target voltage greater than a source read voltage level.

Career Highlights

Xiangyu Yang is currently employed at Micron Technology Incorporated, where he continues to innovate in the field of memory technology. His work has been instrumental in developing solutions that enhance the efficiency and reliability of memory devices.

Collaborations

Xiangyu has collaborated with several talented individuals, including Ching-Huang Lu and Hong-Yan Chen, who contribute to the innovative environment at Micron Technology.

Conclusion

Xiangyu Yang's contributions to memory device technology through his patents demonstrate his commitment to advancing the field. His innovative approaches to read recovery processes and pre-charging techniques are paving the way for more reliable memory devices.