Xiangyu Hou

Title: Innovations by Xiangyu Hou in SiC Device Technology

Introduction

Xiangyu Hou is an accomplished inventor based in Nanjing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) devices. His innovative work focuses on enhancing the performance and integration of these devices.

Latest Patents

Xiangyu Hou holds a patent for a "Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof." This patent describes a conductive channel structure that features a low-voltage region, a first high-voltage region, and a second high-voltage region, all separated by isolation structures on the same SiC-based chip. The fully integrated SiC device integrates first and second conductivity type MOS devices, employing alternating N-type and P-type areas above the conductive channels. The manufacturing process involves stacking a second conductivity type epitaxial layer and buffer layer on an N-type substrate, along with arranging various well regions and heavily doped regions within the buffer layer.

Career Highlights

Xiangyu Hou is affiliated with Southeast University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices, contributing to the evolution of efficient power management systems.

Collaborations

Xiangyu collaborates with notable colleagues, including Weifeng Sun and Long Zhang. Their combined expertise enhances the research and development efforts in the field of SiC devices.

Conclusion

Xiangyu Hou's innovative contributions to SiC device technology demonstrate his commitment to advancing semiconductor research. His patent reflects a significant step forward in the integration and efficiency of electronic devices.