Fujian, China

Xiangjing Zhou

This inventor holds 1 USPTO granted patent. Top assignee: Xiamen Changelight Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiangjing Zhou. Retrieved from https://idiyas.com/inventor/xiangjing-zhou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Xiangjing Zhou: Innovator in Semiconductor Manufacturing

Introduction

Xiangjing Zhou is a prominent inventor based in Fujian, China. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Xiangjing Zhou holds a patent for the "Selective growth of nitride buffer layer." This patent describes a method of manufacturing semiconductor wafers that involves selectively growing a nitride buffer layer on a patterned substrate. The process ensures that the epitaxial layer grows along the normal direction of the substrate, avoiding stress at junction interfaces caused by differing crystal growth directions.

Career Highlights

Xiangjing Zhou is associated with Xiamen Changelight Co., Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing manufacturing techniques in the industry.

Collaborations

Xiangjing Zhou collaborates with notable colleagues, including Kaixuan Chen and Zhiwei Lin, who contribute to his research and development efforts.

Conclusion

Xiangjing Zhou's innovative work in semiconductor manufacturing highlights his role as a key inventor in the field. His contributions continue to influence advancements in technology and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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