Guangdong, China

Xiang Gao

This inventor holds 1 USPTO granted patent. Top assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiang Gao. Retrieved from https://idiyas.com/inventor/xiang-gao-9wpnt9um

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Xiang Gao: Innovator in Charging Time Modulation

Introduction

Xiang Gao is a notable inventor based in Guangdong, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of charging time modulation for pixel units.

Latest Patents

Xiang Gao holds 1 patent for a "Charging time modulating method and device." This innovative method involves obtaining relational data between the charging rate and charging time of pixel units on each pixel area. By calculating an average charging time corresponding to a preset charging rate, he adjusts the initial charging time of the pixel units to match this average, enhancing the efficiency of the charging process.

Career Highlights

Xiang Gao is currently employed at Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. His work focuses on advancing display technologies, contributing to the development of more efficient and effective semiconductor solutions.

Collaborations

Xiang collaborates with Jun Zhao, a fellow innovator in the field. Their partnership aims to push the boundaries of technology in the semiconductor industry.

Conclusion

Xiang Gao's contributions to charging time modulation represent a significant advancement in semiconductor technology. His innovative methods are paving the way for more efficient display technologies in the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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