This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2012.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2012
Title: Xiandi Wan - Innovator in Memory Device Technology
Introduction
Xiandi Wan is a notable inventor based in Xi'an, China. He has made significant contributions to the field of memory device technology. His innovative work has led to the development of a unique memory device that enhances the performance of microprocessors.
Latest Patents
Xiandi Wan holds a patent for a Pseudo Dual-Port Memory. This device is designed to improve the efficiency of memory access in microprocessors. One embodiment of his invention provides an internal data RAM for a microprocessor, which includes both single-port and dual-port memory cells. The method for operating this memory device allows for optimized access depending on whether the access is conflicting or non-conflicting.
Career Highlights
Xiandi Wan is currently employed at Infineon Technologies AG, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of microprocessors, making them more efficient and effective.
Collaborations
Some of his coworkers include Hui Fu and Shuwei Guo, who have collaborated with him on various projects related to memory technology.
Conclusion
Xiandi Wan's contributions to memory device technology exemplify the spirit of innovation. His patent for the Pseudo Dual-Port Memory showcases his ability to address complex challenges in microprocessor design. His work continues to influence the field and pave the way for future advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile