Xia Li

Title: Innovations of Xia Li in Microelectronics Technology

Introduction

Xia Li is a prominent inventor based in Chengdu, China, known for his contributions to microelectronics and semiconductor technology. His innovative work focuses on enhancing the efficiency and performance of electronic devices through advanced transistor designs.

Latest Patents

Xia Li holds a patent for "Gate extraction and injection field effect transistors and method for controlling its channel carrier amount." This invention addresses critical aspects of microelectronics technology by introducing methods for gate extraction and injection FET, as well as channel carrier quantity control. The design features a source, drain, gate, and channel semiconductor area situated on an insulating layer. A gate dielectric layer, made from a thin film material with resistance values of 10-10Ω, is positioned between the gate and the channel semiconductor region. The channel semiconductor can be either a two-dimensional or a three-dimensional semiconductor with two-dimensional characteristics, consisting of 1-10 cellular crystal layers. The advantages of this invention include a significant reduction in power consumption for devices and integrated circuits, achieving improvements by several orders of magnitude.

Career Highlights

Xia Li is affiliated with the University of Electronic Science and Technology of China, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential to revolutionize the efficiency of electronic components.

Collaborations

Xia Li has collaborated with notable colleagues, including Yongbo Liao and Ping Li, who contribute to the research and development of innovative technologies in the field.

Conclusion

Xia Li's contributions to microelectronics through his patented inventions demonstrate his commitment to advancing technology and improving device efficiency. His work is poised to have a lasting impact on the semiconductor industry.