This inventor holds 1 USPTO granted patent. Top assignee: Omnivision Technologies, Inc.. Active years: 2018.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2018
Title: The Innovations of Xi-Feng Gao
Introduction
Xi-Feng Gao is a prominent inventor based in Shanghai, China. He is known for his contributions to the field of image sensor technology. His innovative work has led to the development of a patented technology that enhances the performance of image sensors.
Latest Patents
Xi-Feng Gao holds a patent for a "Backside illuminated image sensor with improved contact area." This invention includes a semiconductor material with a front side and a back side. The design features a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side into the semiconductor material, while the contact area is strategically placed near the lateral edge of the semiconductor. This innovative design improves the efficiency and performance of image sensors.
Career Highlights
Xi-Feng Gao is currently employed at Omnivision Technologies, Inc., where he continues to push the boundaries of image sensor technology. His work has significantly impacted the industry, making him a valuable asset to his company and the field of innovation.
Collaborations
Some of his notable coworkers include Dyson Hsinchih Tai and Cunyu Yang. Their collaboration has fostered an environment of creativity and innovation within the company.
Conclusion
Xi-Feng Gao's contributions to image sensor technology exemplify the spirit of innovation. His patented work not only enhances the functionality of image sensors but also showcases the importance of collaboration in technological advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile