Jinju, South Korea

Woon Ik Park

This inventor holds 1 USPTO granted patent. Top assignees: Global Frontier Hybrid Interface Materials, Korea Institute of Ceramic Engineering and Technology. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Woon Ik Park. Retrieved from https://idiyas.com/inventor/woon-ik-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Woon Ik Park: Innovator in Complex Patterning Technology

Introduction

Woon Ik Park is a notable inventor based in Jinju-si, South Korea. He has made significant contributions to the field of complex patterning technology, which has applications in various industries.

Latest Patents

Woon Ik Park holds a patent for a "Complex patterning device and operation method thereof." This innovative device includes a patterning module that utilizes a master substrate to create a plurality of target patterns on a target substrate by applying pressure. Additionally, it features a punching module that forms and divides these target patterns, enhancing the efficiency of the patterning process.

Career Highlights

Throughout his career, Woon Ik Park has worked with esteemed organizations such as the Korea Institute of Ceramic Engineering and Technology and Global Frontier Hybrid Interface Materials. His work in these institutions has allowed him to develop and refine his innovative technologies.

Collaborations

Woon Ik Park has collaborated with notable colleagues, including Tae Wan Park and Kwang Ho Kim. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Woon Ik Park's contributions to complex patterning technology highlight his role as an influential inventor in the field. His innovative approaches and collaborations continue to shape advancements in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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