Woon-bae Kim

Title: Woon-bae Kim: Innovator in Silicon Direct Bonding Technology

Introduction

Woon-bae Kim is a notable inventor based in Suwon-Si, South Korea. He has made significant contributions to the field of silicon technology, particularly through his innovative patent related to silicon direct bonding methods. His work addresses critical challenges in the bonding process of silicon substrates.

Latest Patents

Woon-bae Kim holds a patent for a silicon direct bonding (SDB) method that effectively suppresses void formation caused by gases. This method involves preparing two silicon substrates with corresponding bonding surfaces, forming trenches in at least one bonding surface, and creating gas discharge outlets that penetrate the bonding surface. The process includes cleaning the substrates, closely contacting them, and thermally treating them to achieve a strong bond. The trenches are strategically formed along dicing lines, allowing gases generated during thermal treatment to be discharged smoothly, thus preventing voids in the junctions of the silicon substrates. He has 1 patent to his name.

Career Highlights

Woon-bae Kim's career is marked by his dedication to advancing silicon bonding technologies. His innovative approach has garnered attention in the industry, showcasing his expertise and commitment to improving manufacturing processes.

Collaborations

Woon-bae Kim has collaborated with notable colleagues, including Sung-gyu Kang and Seung-mo Lim. These partnerships have contributed to the development and refinement of his patented technologies.

Conclusion

Woon-bae Kim's contributions to silicon direct bonding technology highlight his role as an innovator in the field. His patent addresses significant challenges in the industry, paving the way for advancements in silicon substrate bonding processes.