Suwon, South Korea

Wookhyun Kwon

This inventor holds 1 USPTO granted patent and 16 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wookhyun Kwon. Retrieved from https://idiyas.com/inventor/wookhyun-kwon-h5tb08iu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Wookhyun Kwon - Innovator in Integrated Circuit and Semiconductor Devices

Introduction

Wookhyun Kwon is an inventor based in Suwon-si, South Korea. He is known for his contributions to the field of integrated circuits and semiconductor devices. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Wookhyun Kwon has submitted several notable patent applications. One of his applications is for an **INTEGRATED CIRCUIT DEVICE**. This device may include a nanosheet stack comprising a plurality of nanosheets, a gate line partially surrounding each nanosheet, and a source/drain region in contact with the nanosheets. The design also features an inner insulating spacer between the sub-gate part and the source/drain region, with specific sidewall configurations.

Another significant application is for a **SEMICONDUCTOR DEVICE**. This device consists of a substrate with an active pattern that includes multiple channel patterns that are vertically stacked and spaced apart. It also features a source/drain pattern, a gate electrode surrounding the channel patterns, and an insulating film structure. The design aims to enhance the performance and efficiency of semiconductor devices.

Conclusion

Wookhyun Kwon is an emerging inventor whose latest patent applications demonstrate his innovative approach to integrated circuits and semiconductor technology. His work has the potential to contribute significantly to advancements in these fields.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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