Company Filing History:
Years Active: 2025
Title: Wook Bahng: Innovator in SiC MOSFET Technology
Introduction
Wook Bahng is a notable inventor based in Changwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of SiC MOSFET devices. His innovative work has led to advancements that enhance the performance and efficiency of electronic components.
Latest Patents
Wook Bahng holds a patent for a trench-gate SiC MOSFET device and its manufacturing method. The patent describes a trench-gate SiC MOSFET device that includes a gate oxide film covering a gate trench formed in a SiC substrate, a doped well formed in the bottom region of the gate trench, and a gate electrode formed within the trench. This invention aims to improve the efficiency and reliability of power electronic devices.
Career Highlights
Wook Bahng is affiliated with the Korea Electrotechnology Research Institute, where he continues to work on innovative technologies in the field of electrotechnology. His research focuses on enhancing semiconductor devices, which are crucial for various applications in electronics.
Collaborations
Wook Bahng has collaborated with notable colleagues, including Jeong Hyun Moon and In-Ho Kang. These collaborations have contributed to the advancement of research and development in semiconductor technologies.
Conclusion
Wook Bahng's contributions to the field of SiC MOSFET technology exemplify his commitment to innovation and excellence. His work not only advances the technology but also sets a foundation for future developments in the semiconductor industry.