Hwaseong-si, South Korea

Woojae Jang

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 4(Granted Patents)


Location History:

  • Suwon-si, KR (2022)
  • Hwaseong-si, KR (2020 - 2023)

Company Filing History:


Years Active: 2020-2023

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4 patents (USPTO):Explore Patents

Title: Woojae Jang: Innovator in Non-Volatile Memory Technology

Introduction

Woojae Jang is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of memory storage technologies.

Latest Patents

Among his latest patents, Woojae Jang has developed a non-volatile memory device and its operating method. This innovative method involves reading a wear-out pattern of a memory block when a controller identifies it as a re-use memory block. The controller then selects an operation mode corresponding to the read wear-out pattern and transmits this mode to the non-volatile memory device. Another notable patent is for a three-dimensional semiconductor memory device. This device features a stack structure with gate structures and first dielectric patterns that are alternately stacked. It includes a vertical channel that penetrates the stack structure and a charge storage layer that extends between the vertical channel and the gate structures.

Career Highlights

Woojae Jang is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His innovative approaches have positioned him as a key player in the development of advanced semiconductor solutions.

Collaborations

He collaborates with talented coworkers, including Sejun Park and Jaeduk Lee, who contribute to his research and development efforts.

Conclusion

Woojae Jang's contributions to non-volatile memory technology exemplify his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving memory devices, making significant strides in the technology landscape.

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