Company Filing History:
Years Active: 2023
Title: Woo-young Shim: Innovator in GaN Technology
Introduction
Woo-young Shim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) materials. With a total of seven patents to his name, Shim is recognized for his innovative approaches to electrical devices.
Latest Patents
Among his latest patents, Shim has proposed a layered GaN compound and a GaN nanosheet, along with an electrical device utilizing these materials. The layered compound is represented by MGaN, where M includes at least one of the Group II elements, and specific ranges for x, y, and z are defined. Additionally, he has developed a layered compound containing indium and arsenic, which also includes a nanosheet and an electrical device based on these materials. This compound is represented by NaInAs, with defined ranges for x, y, and z.
Career Highlights
Shim is affiliated with Yonsei University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices, enhancing performance and efficiency.
Collaborations
Some of his notable coworkers include Min-jung Kim and Tae-young Kim, who have collaborated with him on various projects related to his patents.
Conclusion
Woo-young Shim's innovative work in GaN technology and his contributions to the field of electrical devices highlight his role as a leading inventor. His patents reflect a commitment to advancing semiconductor technology, paving the way for future innovations.