Yonsei University

Woo-young Shim

Tae-young Kim

Min-jung Kim

Sang-jin Choi

Hong Beom Choi

Ji-hong Bae

Jong-bum Won

Bo-kyeong Kim

Proposed are a layered GaN compound, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by MGaN(M is at least one of Group II elements, and 0&#x3c;x&#x2264;1.0, 0.6&#x2264;y&#x2264;1.25, 0.75&#x2264;z&#x2264;1.5).

Layered GaN and GaN nanosheet, and electrical device using the same

Proposed are a layered compound having indium and arsenic, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] NaInAs(0&#x2264;x&#x3c;1.0, 0.8&#x2264;y&#x2264;1.2, 1.2&#x2264;z&#x2264;1.8).

Layered compound and nanosheet containing indium and arsenic, and electrical device using the same

Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] MAB(M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0&#x3c;m&#x3c;x), and having ferroelectric-like properties.

Layered group III-V compound including additive elements and having ferroelectric-like properties, and nanosheet using the same

Proposed are a layered Group III-V antimony compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] MASb(Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0&#x3c;m&#x3c;x).

Layered group III-V compound and nanosheet containing antimony, and electrical device using the same

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0&#x3c;m&#x3c;x).

Layered group III-V compound and nanosheet containing arsenic, and electrical device using the same

Proposed are a layered Group III-V compound containing phosphorus, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound represented by [Formula 1] MAP(Where M is at least one of Group II elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0&#x3c;m&#x3c;x).

Layered group III-V compound and nanosheet containing phosphorus, and electrical device using the same

Proposed are a layered compound having indium and phosphide, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by KInP(0&#x2264;x&#x2264;1.0, 0.75&#x2264;y&#x2264;1.25, 1.25&#x2264;z&#x2264;1.75).

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Seoul, South Korea

Woo-young Shim