Company Filing History:
Years Active: 2011-2017
Title: Woo-Jung Sun: Innovator in Nonvolatile Memory Technology
Introduction
Woo-Jung Sun is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding three patents that showcase his innovative approaches to memory technology. His work is instrumental in advancing the efficiency and performance of memory devices used in various applications.
Latest Patents
One of Woo-Jung Sun's latest patents is titled "Driving method of nonvolatile memory device using variable resistive element." This patent describes a method for performing write operations in nonvolatile memory devices through a series of consecutive write loops. The method involves writing data to multiple nonvolatile memory cells during a first write loop, followed by a second write loop, with varying maximum parallel bit sizes.
Another significant patent is "Nonvolatile memory device with reduced coupling noise and driving method thereof." This invention outlines a nonvolatile memory device that includes multiple memory banks and a shared read global bit line. It also features a discharge control circuit that discharges the write global bit line during an initialization interval after power-up, thereby enhancing the device's performance.
Career Highlights
Woo-Jung Sun is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to focus on developing cutting-edge memory technologies that are crucial for modern electronic devices.
Collaborations
Throughout his career, Woo-Jung Sun has collaborated with notable colleagues, including Jae-Yun Lee and Kwang-Jin Lee. These collaborations have contributed to the successful development of innovative memory solutions.
Conclusion
Woo-Jung Sun's contributions to nonvolatile memory technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His inventions are paving the way for advancements in memory devices, ensuring better performance and efficiency in future technologies.