Suwon, South Korea

Woo-in Chung

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Woo-in Chung. Retrieved from https://idiyas.com/inventor/woo-in-chung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Woo-in Chung: Innovator in Semiconductor Technology

Introduction

Woo-in Chung is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patented method that enhances the efficiency of semiconductor devices.

Latest Patents

Woo-in Chung holds a patent for a "Method for forming insulating films in semiconductor devices." This method involves several steps, including the sequential formation of material layers over a semiconductor substrate, selective etching to expose a device isolation region, and the creation of side wall spacers. The process culminates in the formation of a trench and the deposition of an insulating film, which is crucial for the performance of semiconductor devices.

Career Highlights

Woo-in Chung is associated with Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovation. With a focus on improving device performance, he has contributed to advancements that benefit the industry as a whole.

Collaborations

One of his notable collaborators is Chang-gyu Kim. Together, they have worked on projects that push the boundaries of semiconductor technology.

Conclusion

Woo-in Chung's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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