Suwon, South Korea

Wonsub Hwang

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wonsub Hwang. Retrieved from https://idiyas.com/inventor/wonsub-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Wonsub Hwang - Innovator in Substrate Processing Technology

Introduction

Wonsub Hwang is an inventor based in Suwon-si, South Korea. He is known for his contributions to the field of substrate processing technology. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Wonsub Hwang has submitted several notable patent applications. One of his latest applications is for an "Electro-Static Chuck and Substrate Processing Apparatus Including the Same." This invention features a chuck plate designed to seat a substrate, along with an insulating pillar and a heating plate that efficiently discharges heat to the substrate. The design minimizes overlap between regions affected by the heating plate and a second ring, enhancing processing efficiency.

Another significant application is for a "Voltage Waveform Controlling Method, Substrate Processing Method, and Substrate Processing Apparatus." This method involves generating a non-sinusoidal voltage waveform with specific periods and transitions. It allows for precise adjustments to the negative voltage period and ramp slope, optimizing substrate processing.

Conclusion

Wonsub Hwang's innovative approaches in substrate processing technology demonstrate his potential as an inventor. His latest patent applications reflect a commitment to advancing the field, even in the absence of granted patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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