Suwon, South Korea

Wonjung Jang

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wonjung Jang. Retrieved from https://idiyas.com/inventor/wonjung-jang-vl4i6q72

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Wonjung Jang: Semiconductor Device Innovation

Introduction

Wonjung Jang is an inventor associated with Suwon, South Korea, and Samsung Electronics Co., Ltd. His patent work concerns semiconductor device design and fabrication.

Latest Patents

The provided information lists one patent for Jang: “Semiconductor Device and Method of Fabricating the Same.” The invention describes a semiconductor chip with a pad, a protective layer that exposes part of the pad through an opening, and an electrically connected bump structure. The bump structure includes a metal layer on the pad and a solder ball on the metal layer. The metal layer’s width is specified as approximately 0.85 to 0.95 times the width of the opening. Jang is credited with 1 patent.

Career Highlights

Jang’s listed patent reflects work on semiconductor packaging and fabrication, particularly the structure connecting a chip pad to a solder ball. The provided information associates him with Samsung Electronics Co., Ltd.

Collaborations

Sangho Cha is identified as Jang’s coworker. The information provided does not specify whether Cha collaborated on the patent.

Conclusion

Wonjung Jang’s listed invention addresses the design and fabrication of a semiconductor bump structure, contributing to the broader field of semiconductor device technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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