Leuven, Belgium

Wonjong Kim

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Asm IP Holding B.v.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wonjong Kim. Retrieved from https://idiyas.com/inventor/wonjong-kim-4rqt8gz1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Innovator Profile: Wonjong Kim

Introduction

Wonjong Kim is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent work. His expertise lies in the development of advanced materials and methods for forming silicon germanium layers.

Latest Patents

Wonjong Kim holds a patent titled "Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same." This patent describes a method for forming a doped silicon germanium layer by simultaneously exposing a substrate to various precursors, including silicon, germanium, boron, and a heteroleptic gallium precursor. The innovative approach allows for the creation of a silicon germanium layer that is effectively doped with both boron and gallium.

Career Highlights

Wonjong Kim is currently associated with Asm IP Holding B.V., where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

Wonjong collaborates with talented professionals in his field, including Rami Khazaka and Michael Givens. Their combined expertise fosters an environment of innovation and creativity.

Conclusion

Wonjong Kim's contributions to semiconductor technology through his patent work exemplify the spirit of innovation. His ongoing research and collaborations continue to shape the future of electronic materials and methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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