Mountain View, CA, United States of America

Wonill Ha

This inventor holds 2 USPTO granted patents. Top assignee: Leland Stanford Junior University. Active years: 2004-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wonill Ha. Retrieved from https://idiyas.com/inventor/wonill-ha-g98yv9lz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2004-2010

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2 patents (USPTO):Explore Patents

Title: Innovations by Wonill Ha in Semiconductor Technology

Introduction

Wonill Ha is a prominent inventor based in Mountain View, CA (US). He has made significant contributions to the field of optical-electronic semiconductor devices. With a total of 2 patents, his work focuses on enhancing photoluminescent output for high power applications.

Latest Patents

One of his latest patents involves "Multiple GaInNAs quantum wells for high power applications." This invention provides improved photoluminescent output at wavelengths approaching and beyond 1.3 μm. The technology utilizes a multiple quantum well strain compensated structure formed with a GaInNAs-based quantum well laser diode and GaNAs-based barrier layers. By incorporating tensile-strained GaNAs barrier layers, a larger active region with multiple quantum wells can be created, which increases the optical gain of the device. This innovation allows for the development of both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices, with room temperature emission reaching and exceeding 1.3 μm.

Another significant patent by Wonill Ha is the "GaInNAsSb quantum well semiconductor devices." This invention also aims to improve photoluminescent output, specifically at wavelengths beyond 1.3 μm. The use of Sb in the active region of a GaInNAs-based quantum well laser diode enhances photoluminescence while shifting the wavelength. Sb serves both as a surfactant, improving the incorporation of N and In into the active region, and as an alloy constituent for red-shifting the device's wavelength. This technology enables the growth of edge emitting laser devices and VCSEL devices with room temperature emission ranging from 1.3 to 1.6 μm.

Career Highlights

Wonill Ha is currently associated with Leland Stanford Junior University, where he continues to advance his research in semiconductor technology. His innovative work has positioned him as a key figure in the development of high-performance optical-electronic devices.

Collaborations

He has collaborated with notable colleagues such as James S Harris, Jr. and Vincent Gambin, contributing to the advancement of semiconductor technologies.

Conclusion

Wonill Ha's contributions to the field of semiconductor technology through his innovative patents demonstrate his commitment to enhancing optical-electronic devices. His work continues to influence advancements in high power applications and phot

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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