Suwon-si, South Korea

Won Woo Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Won Woo Lee. Retrieved from https://idiyas.com/inventor/won-woo-lee-yhxqzggd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Won Woo Lee: Inventor in Multilayered Capacitor Technology.

Introduction

Won Woo Lee is an inventor based in Suwon-si, South Korea. His patent work includes a multilayered capacitor and a method for manufacturing it. He is associated with Samsung Electro-Mechanics.

Latest Patents

Lee is named on 1 patent: “Multilayered Capacitor and Manufacturing Method Thereof.” The invention describes a capacitor body containing dielectric layers and internal electrodes, with an external electrode outside the body. Its dielectric crystal grains have Ba(TiZr)O as a main component and satisfy a specified compositional condition at their centers. The patent also specifies a grain-size D50 of about 130 to 170 nanometers and a coefficient of variation of 35% to 45%.

Career Highlights

Lee’s listed patent reflects work on capacitor materials and manufacturing, with particular attention to dielectric grain composition and size distribution. His association with Samsung Electro-Mechanics connects this work to the company’s electronics and component technologies.

Collaborations

Myungwoo Lee and Haesol Jung are identified as Lee’s coworkers. The available information does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Won Woo Lee’s documented invention focuses on the structure and dielectric properties of a multilayered capacitor, highlighting his contribution to capacitor technology at Samsung Electro-Mechanics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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