Won-suek Cho

Title: Innovations of Won-suek Cho in Metal Silicide Structures

Introduction

Won-suek Cho is a notable inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of integrated circuit technology. His innovative methods have paved the way for advancements in semiconductor fabrication.

Latest Patents

Won-suek Cho holds a patent for "Methods for fabricating metal silicide structures using an etch stopping capping layer." This patent describes a method of fabricating an integrated circuit device that involves forming a refractory metal layer on a silicon-containing substrate. The process includes processing the refractory metal layer to create an amorphous metal silicide layer and depositing an insulating material on this layer. The insulating material is applied at a temperature that preserves the amorphous state of the metal silicide layer, ultimately forming a capping structure. The method also includes crystallizing the amorphous metal silicide layer and forming an etching stop layer on the capping structure. This innovation is crucial for enhancing the performance and reliability of integrated circuits.

Career Highlights

Won-suek Cho is associated with Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to contribute to cutting-edge technologies in semiconductor manufacturing. With 1 patent to his name, he has established himself as a valuable asset in the field.

Collaborations

Throughout his career, Won-suek Cho has collaborated with talented individuals such as Hyung-shin Kwon and Byung-jun Hwang. These collaborations have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Won-suek Cho's contributions to the field of integrated circuits through his innovative patent demonstrate his expertise and commitment to advancing technology. His work continues to influence the semiconductor industry and inspire future innovations.