Kyungki-do, South Korea

Won Soon Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Won Soon Lee. Retrieved from https://idiyas.com/inventor/won-soon-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Innovator Profile: Won Soon Lee

Introduction

Won Soon Lee is a notable inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the area of trench isolation structures.

Latest Patents

Won Soon Lee holds a patent titled "Method for forming a trench isolation structure comprising an interface." This innovative method enhances the bonding force between the sidewall silicon dioxide layer and the trench sidewall in silicon substrates. The process involves forming a trench, growing sidewall silicon dioxide through a first oxidation process, and depositing PE-TEOS on the silicon substrate. The method further includes etching back the PE-TEOS layer and conducting a second oxidation process or annealing to improve bonding. Finally, the trench is filled with O.sub.3 -TEOS, followed by another layer of PE-TEOS and a second annealing process.

Career Highlights

Won Soon Lee is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics and semiconductor industry. His work has contributed to advancements in semiconductor manufacturing processes.

Collaborations

He has collaborated with notable colleagues, including Chan Sik Park and Han Seong Kim, to further enhance the development of innovative technologies in their field.

Conclusion

Won Soon Lee's contributions to semiconductor technology through his patented methods demonstrate his expertise and commitment to innovation. His work continues to influence advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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