Osan, South Korea

Won Sik Ahn

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Wonik Ips Co., Ltd.. Active years: 2025.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Won Sik Ahn

Introduction

Won Sik Ahn is a notable inventor based in Osan-si, South Korea. He has made significant contributions to the field of substrate processing through his innovative methods. His work focuses on enhancing the efficiency and effectiveness of internal chamber processing.

Latest Patents

Won Sik Ahn holds a patent for an "Internal chamber processing method and substrate processing method." This invention relates to a method for performing processing on a chamber and its components. The method includes a pressurizing operation that raises the pressure inside the chamber to a level higher than atmospheric pressure using a pressurized gas. Following this, a depressurizing operation lowers the pressure back down after the substrate to be processed has been removed from the chamber.

Career Highlights

Ahn is currently associated with Wonik Ips Co., Ltd., where he continues to develop and refine his innovative techniques. His work has been instrumental in advancing substrate processing technologies.

Collaborations

He collaborates with talented coworkers, including Ah Young Hwang and Won Jun Jang, who contribute to the innovative environment at Wonik Ips Co., Ltd.

Conclusion

Won Sik Ahn's contributions to internal chamber processing methods highlight his role as a key innovator in the field. His patent reflects a commitment to improving substrate processing techniques, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
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