Incheon, South Korea

Won-Jun Kim

This inventor holds 1 USPTO granted patent. Top assignees: Hyundai Motor Company, Incheon University Industry Academic Cooperation Foundation, Kia Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Won-Jun Kim. Retrieved from https://idiyas.com/inventor/won-jun-kim-wi62qdd0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Won-Jun Kim: Patent Inventor in Incheon

Introduction

Won-Jun Kim is an inventor based in Incheon, South Korea. His patent work includes a power factor correction circuit switching method designed to reduce leakage current. The available information lists 1 patent associated with him.

Latest Patents

Kim’s patent, “Power Factor Correction Circuit Switching Method for Reducing Leakage Current,” describes a staged approach to increasing an output capacitor’s voltage. A controller first performs an initial charging operation, then increases the voltage further according to whether it reaches a preset reference level. The controller subsequently switches two poles in the power factor correction circuit at different duty ratios, based on whether the voltage reaches a second preset reference level.

Career Highlights

The provided career information associates Kim with Hyundai Motor Company and Kia Corporation. His patent focuses on power factor correction circuit operation and leakage-current reduction.

Collaborations

Kim’s listed coworkers include Ye-Rin Lee and Dae-woo Lee. Their names are provided as professional collaborators, though specific joint projects are not detailed.

Conclusion

Won-Jun Kim’s listed invention addresses power factor correction through staged capacitor charging and controlled switching, reflecting his patent activity in this technical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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