Wolfgang O Schlosser

Title: Innovations of Wolfgang O Schlosser

Introduction

Wolfgang O Schlosser is a notable inventor based in Basking Ridge, NJ (US). He has made significant contributions to the field of semiconductor devices, holding 2 patents that showcase his innovative approach to technology.

Latest Patents

Schlosser's latest patents include advancements in high-power III-V semiconductor devices. These devices, such as MESFET, JFET, MOSFET, and IGFET, are designed with relatively high-ohmic gates or wide gate finger widths to maximize the utilization of semiconductor surfaces. For instance, aluminum gate electrodes with a cross-sectional area of 1.2 square micrometers and a length of 300 micrometers or more are utilized, resulting in devices with unexpectedly high power handling capabilities. Another significant patent focuses on GaAs FETs, which exhibit excellent long-term stability when equipped with a drain ledge, a drain contact with reduced dendrite size, and a silicon nitride passivation layer. Accelerated aging tests at device case temperatures of 250 degrees Celsius indicate essentially no device failures after 200 hours of observation, with a median failure time of approximately 500 hours.

Career Highlights

Throughout his career, Schlosser has worked with prestigious organizations, including AT&T Bell Laboratories and Bell Telephone Laboratories. His work in these institutions has contributed to the advancement of semiconductor technology and has had a lasting impact on the industry.

Collaborations

Some of Schlosser's notable coworkers include Stuart H Wemple and Christopher L Allyn. Their collaborative efforts have furthered the development of innovative technologies in the semiconductor field.

Conclusion

Wolfgang O Schlosser's contributions to semiconductor technology through his patents and career achievements highlight his role as a significant inventor in the field. His work continues to influence advancements in high-power semiconductor devices.