At&t Bell Laboratories

Bell Telephone Laboratories

Wolfgang O Schlosser

Stuart H Wemple

James Vincent DiLorenzo

William Charles Niehaus

James C Hwang

Christopher L Allyn

David E Iglesias

Peter G Flahive

III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.

High-power III-V semiconductor device

GaAs FETs exhibit excellent long-term stability if they have a drain ledge, a drain contact with reduced dendrite size, and a silicon nitride passivation layer. Accelerated aging tests at device case temperatures of 250 degrees C. indicate essentially no device failures after 200 hours of observation and a median failure time of approximately 500 hours.

GaAs FETs Having long-term stability

Growing community of inventors

Basking Ridge, NJ, United States of America

Wolfgang O Schlosser