Zurich, Switzerland

Wolfgang Kalb

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Basf Se Corporation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wolfgang Kalb. Retrieved from https://idiyas.com/inventor/wolfgang-kalb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Wolfgang Kalb: Innovator in Organic Semiconductors

Introduction

Wolfgang Kalb is a notable inventor based in Zurich, Switzerland. He has made significant contributions to the field of organic semiconductors, particularly through his innovative patent.

Latest Patents

Kalb holds a patent for "Quinoid systems as organic semiconductors." This patent describes a semiconducting layer that comprises a non-polymeric quinoid heteroacene compound. The formula includes various components, where X can be O, S, or NR, and each R can be independently selected from hydrogen and an organic residue. This invention has applications in the manufacture of diodes, organic field effect transistors, and organic thin film transistors.

Career Highlights

Wolfgang Kalb is associated with BASF SE Corporation, where he has been able to apply his expertise in organic semiconductors. His work has contributed to advancements in the field, enhancing the performance and efficiency of electronic devices.

Collaborations

Kalb has collaborated with notable colleagues, including Ulrich Berens and Arno Stassen. Their combined efforts have furthered research and development in organic semiconductor technologies.

Conclusion

Wolfgang Kalb's innovative work in organic semiconductors exemplifies the impact of his inventions on modern technology. His contributions continue to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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