San Jose, CA, United States of America

Wipawan Yindeepol

This inventor holds 7 USPTO granted patents. Top assignee: National Semiconductor Corporation. Active years: 1996-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wipawan Yindeepol. Retrieved from https://idiyas.com/inventor/wipawan-yindeepol

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 219(Granted Patents)


Location History:

  • San Jose, CA (US) (1996 - 2002)
  • Campbell, CA (US) (2005)

Company Filing History:


Years Active: 1996-2005

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7 patents (USPTO):Explore Patents

Title: Wipawan Yindeepol: Innovator in Semiconductor Technology

Introduction

Wipawan Yindeepol is a prominent inventor based in San Jose, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His innovative work has advanced the development of various semiconductor devices, showcasing his expertise and creativity.

Latest Patents

One of Wipawan's latest patents is titled "Trim zener using double poly process." This invention involves a zener zap diode device and a system for creating such a device using a double poly process. In this process, p+ and n+ regions are formed in a tub through p-doped and n-doped polysilicon regions, establishing a p-n junction. The invention also describes how cobalt or other refractory metals can react with silicon to form a silicide on the p-doped polysilicon region. By reverse biasing the p-n junction and applying a sufficiently high zap current, the silicide can migrate across the junction, forming a silicide bridge that selectively shorts out the p-n junction.

Another notable patent is "Elimination of walkout in high voltage trench isolated devices." This invention addresses the issue of walkout in high voltage trench isolated semiconductor devices. By applying a voltage bias signal directly to the epitaxial silicon surrounding the device, the initial breakdown voltage is elevated, effectively eliminating walkout. The application of a positive voltage bias signal ensures that no walkout occurs during normal operation.

Career Highlights

Wipawan Yindeepol is currently employed at National Semiconductor Corporation, where he continues to innovate and contribute to the semiconductor industry. His work has been instrumental in developing advanced technologies that enhance device performance and reliability.

Collaborations

Wipawan has collaborated with notable colleagues, including Rashid Bashir and Reda R Razouk. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Wipawan Yindeepol's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative spirit continues to drive advancements in the industry, making a lasting impact on technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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