Hsinchu, Taiwan

Win-Yi Hsieh


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Win-Yi Hsieh: Innovator in Semiconductor Technology

Introduction

Win-Yi Hsieh is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of contact plugs. His innovative methods have advanced the efficiency and effectiveness of semiconductor devices.

Latest Patents

Hsieh holds a patent for a "Method of Fabricating Contact Plug." This patent describes a process for creating a metal plug on a semiconductor substrate that includes a MOS device, a dielectric layer, and a via hole. The method involves forming a conformal titanium layer on the dielectric layer and the via hole, followed by low-temperature annealing in a nitrogen environment. This process transforms the surface of the titanium layer into a first thin titanium nitride layer. Subsequently, a conformal second titanium nitride layer is formed using collimator sputtering, and a metal layer is etched back to create the final metal plug.

Career Highlights

Win-Yi Hsieh is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in enhancing the manufacturing processes of semiconductor devices, contributing to the company's reputation for innovation and quality.

Collaborations

Hsieh has collaborated with esteemed colleagues such as Yuan-Ching Peng and Lih-Juann Chen. Their combined expertise has fostered advancements in semiconductor technology and has led to successful projects within the industry.

Conclusion

Win-Yi Hsieh's contributions to semiconductor technology through his innovative patent and collaborations highlight his role as a key inventor in the field. His work continues to influence the development of efficient semiconductor manufacturing processes.

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