Company Filing History:
Years Active: 2024-2026
Title: Wim Malfait: Innovator in Additive Manufacturing and Siloxane Polymers
Introduction
Wim Malfait is a notable inventor based in Zurich, Switzerland. He has made significant contributions to the fields of additive manufacturing and polymer science. With a total of 3 patents, his work focuses on innovative materials and methods that push the boundaries of technology.
Latest Patents
Malfait's latest patents include advancements in the additive manufacturing of silica aerogel objects. One patent describes an ink composition for this purpose, which consists of a gellable silica sol mixed with mesoporous silica powder. This composition exhibits unique properties, such as a yield stress ranging from 30 to 3000 Pa and a viscosity of 5 to 150 Pa·s at a shear rate of 50 s-1. The method for creating three-dimensional silica aerogel objects involves direct ink writing, gelation, and a drying step to achieve the final product. Another patent focuses on a siloxane-based polymeric liquid material, which is formed from core-shell type molecular building blocks. This innovative material has specific structural characteristics and a viscosity range of 10-100,000 cP, showcasing its versatility in various applications.
Career Highlights
Throughout his career, Wim Malfait has worked with esteemed organizations such as Empa Eidgenössische Materialprüfungs- und Forschungsanstalt. His experience in these research institutions has allowed him to develop and refine his innovative ideas, contributing to advancements in material science.
Collaborations
Malfait has collaborated with notable colleagues, including Matthias Koebel and Ana Stojanovic. These partnerships have fostered a collaborative environment that enhances the development of cutting-edge technologies.
Conclusion
Wim Malfait's contributions to additive manufacturing and polymer science exemplify the spirit of innovation. His patents reflect a commitment to advancing technology and materials, making a significant impact in his field.