William Wiegmann

Title: The Innovations of William Wiegmann

Introduction

William Wiegmann is a notable inventor based in Middlesex, NJ (US). He has made significant contributions to the field of semiconductor devices, holding a total of 3 patents. His work has advanced the understanding and application of graded bandgap rectifying semiconductor devices.

Latest Patents

Wiegmann's latest patents include a unipolar, rectifying semiconductor device that utilizes an asymmetric potential barrier created by a sawtooth-shaped composition profile of Al.sub.x Ga.sub.1-x As between layers of n-type GaAs. This innovative design allows for rectification through single and multiple barriers, as well as doped and undoped barriers. Additionally, he has developed methods for fabricating periodic monolayer semiconductor structures using modified molecular beam epitaxy techniques. This process synthesizes single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates, enabling the growth of as many as 10,000 monolayers in a single structure.

Career Highlights

Wiegmann has had a distinguished career at Bell Telephone Laboratories, where he has been instrumental in the development of advanced semiconductor technologies. His work has not only contributed to theoretical advancements but has also led to practical applications in infrared detectors, hot electron transistors, and mixer diodes.

Collaborations

Throughout his career, Wiegmann has collaborated with esteemed colleagues such as Arthur C. Gossard and Raymond Dingle. These partnerships have fostered a rich environment for innovation and have led to significant advancements in semiconductor research.

Conclusion

William Wiegmann's contributions to the field of semiconductor devices are noteworthy and impactful. His innovative patents and career at Bell Telephone Laboratories highlight his role as a leading inventor in this critical area of technology.