Company Filing History:
Years Active: 2004
Title: The Innovations of William Wc Koutny
Introduction
William Wc Koutny is an accomplished inventor based in Santa Clara, CA. He has made significant contributions to the field of magnetic random access memory (MRAM) technology. His innovative work has led to the development of a unique patent that enhances the efficiency and functionality of MRAM devices.
Latest Patents
Koutny holds a patent for a "Localized field-inducing line and method for making the same." This invention includes a field-inducing line with a first layer composed of a plurality of dielectrically spaced conductive segments. Additionally, it features a second layer that has a conductive portion in contact with at least two of the dielectrically spaced conductive segments. The method for fabricating this field-inducing layer involves patterning a conductive layer to form the first layer and depositing another conductive layer above at least a portion of the first layer to create the second layer. Notably, the design includes specific cladding layers that enhance the performance of the magnetic junction within the device.
Career Highlights
Koutny is currently associated with Silicon Magnetic Systems, where he continues to push the boundaries of MRAM technology. His work is characterized by a commitment to innovation and a deep understanding of magnetic systems.
Conclusion
William Wc Koutny's contributions to the field of MRAM technology exemplify the spirit of innovation. His patent reflects a significant advancement in memory device technology, showcasing his expertise and dedication to improving electronic systems.