The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Sep. 11, 2002
William W.C. Koutny, Santa Clara, CA (US);
Silicon Magnetic Systems, San Jose, CA (US);
Abstract
A magnetic random access memory (MRAM) device is provided which includes a field-inducing line with a first layer having a plurality of dielectrically spaced conductive segments and a second layer having a conductive portion in contact with at least two of the dielectrically spaced conductive segments. A method for fabricating such a field-inducing layer may include patterning a conductive layer to form the first layer and depositing another conductive layer above at least a portion of the first layer to form the second layer. In some cases, a surface of a first lateral portion of the field-inducing line substantially aligned with a magnetic junction of the device may include a cladding layer, while a surface of a second portion of the field-inducing line substantially aligned with a spacing arranged adjacent to the magnetic junction may be substantially absent of a cladding layer.