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Lexington, MA, United States of America

William T Lindley

This inventor holds 4 USPTO granted patents. Top assignee: Massachusetts Institute of Technology. Active years: 1983-1994.

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 133(Granted Patents)

Location History:

Lexington, MA (US) (1983 - 1991)
Lexington, NH (US) (1994)

Company Filing History:

Massachusetts Institute of Technology

Years Active: 1983-1994

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4 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5298787 - Semiconductor embedded layer technology including permeable base (1994-03-29),

2. 5032538 - Semiconductor embedded layer technology utilizing selective epitaxial (1991-07-16),

3. 4458324 - Charge domain multiplying device (1984-07-03),

4. 4378629 - Semiconductor embedded layer technology including permeable base (1983-04-05),

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]

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