West Lebanon, NH, United States of America

William Scheideler

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Dartmouth College. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William Scheideler. Retrieved from https://idiyas.com/inventor/william-scheideler

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: William Scheideler: Inventor of Liquid-Metal-Printed Oxide Transistors.

Introduction

William Scheideler is an inventor based in West Lebanon, New Hampshire, and is associated with Dartmouth College. His work includes a patent for a liquid-metal printing method that can produce two-dimensional alloyed oxide films for transistor applications.

Latest Patents

Scheideler is associated with 1 patent, titled “Liquid Metal Printed 2D Ultrahigh Mobility Conducting Oxide Transistors.” The invention describes applying a second workpiece onto a first so that metal on the second contacts a dielectric on the first, forming an alloyed oxide film. The film, which may be made from indium oxide or other materials, can be used to create a liquid-metal-printed two-dimensional alloyed oxide film transistor.

Career Highlights

Scheideler’s patent highlights an approach to forming conducting oxide films through liquid-metal printing. The method brings together materials on separate workpieces to create a film with potential use in transistor fabrication.

Collaborations

Scheideler’s listed coworker is Andrew Hamlin. His work is associated with Dartmouth College.

Conclusion

William Scheideler’s patent describes a liquid-metal-printing technique for producing alloyed oxide films and transistor structures, reflecting his contribution to materials and device innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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