Martinez, GA, United States of America

William S Dynan

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2011-2013

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2 patents (USPTO):Explore Patents

Title: William S Dynan: Innovator in Biomolecular Delivery and Radiation Technology

Introduction

William S Dynan is a notable inventor based in Martinez, GA (US). He has made significant contributions to the fields of biomolecular delivery and radiation technology. With a total of 2 patents, his work has implications for both medical and industrial applications.

Latest Patents

Dynan's latest patents include "Porous-wall hollow glass microspheres as carriers for biomolecules." This invention involves compositions of porous-wall hollow glass microspheres that contain biomolecules within their voids. These compositions are designed for diagnostic and therapeutic delivery of biomolecules. Another significant patent is "Microirradiators and methods of making and using same." This patent describes improved radiation devices that produce low absolute radiation levels with high radiation flux densities, enhancing their applications in various fields.

Career Highlights

Throughout his career, Dynan has worked with esteemed organizations such as Georgia Health Sciences University Research Institute, Inc. and Savannah River Nuclear Solutions, LLC. His experience in these institutions has allowed him to develop innovative technologies that address complex challenges in health and safety.

Collaborations

Dynan has collaborated with notable colleagues, including Shuyi Li and George G Wicks. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

William S Dynan's contributions to innovation in biomolecular delivery and radiation technology highlight his role as a significant inventor. His patents reflect a commitment to advancing scientific knowledge and practical applications in these critical fields.

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