Bethlehem, PA, United States of America

William R Harshbarger


Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 58(Granted Patents)


Company Filing History:


Years Active: 1980

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2 patents (USPTO):Explore Patents

Title: The Innovations of William R. Harshbarger

Introduction

William R. Harshbarger is a notable inventor based in Bethlehem, PA. He has made significant contributions to the field of integrated circuit fabrication, holding a total of 2 patents. His work primarily focuses on advanced fabrication techniques that enhance the performance and efficiency of electronic components.

Latest Patents

Harshbarger's latest patents include a device fabrication method utilizing plasma etching. This innovative approach allows for high-density fine-line integrated structure fabrication, ensuring straight vertical walls and eliminating undercutting. The choice of appropriate plasma chemistry is critical to the system's effectiveness. The inclusion of recombination centers and active etchant species plays a vital role in controlling etching anisotropy. This technology is particularly relevant for large scale integrated circuitry (LSI) and is expected to be beneficial for extremely fine design rules in Very Large Scale Integrated circuitry.

Another significant patent involves the fabrication of patterned silicon nitride insulating layers. This method employs reactive plasma deposition while decreasing the substrate temperature. The reduction in temperature influences the etching characteristics, resulting in sloped sidewalls at an acute angle with the substrate, even during overetching. This technique is essential for integrated circuit fabrication, enhancing the precision and reliability of electronic devices.

Career Highlights

William R. Harshbarger has had a distinguished career at Bell Telephone Laboratories, where he has been instrumental in advancing semiconductor technology. His innovative approaches have paved the way for improvements in integrated circuit design and manufacturing processes.

Collaborations

Throughout his career, Harshbarger has collaborated with esteemed colleagues such as Roy A. Porter and Hyman J. Levinstein. These partnerships have fostered a collaborative environment that has led to groundbreaking advancements in the field.

Conclusion

William R. Harshbarger is a prominent figure in the realm of integrated circuit fabrication, with a focus on plasma etching and insulating layer formation. His contributions have significantly impacted the development of modern electronic devices, showcasing the importance of innovation in technology.

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