Fair Haven, NJ, United States of America

William R Baarck

This inventor holds 1 USPTO granted patent. Top assignee: US Government as Represented by the Secretary of the Army. Active years: 1995.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 161(Granted Patents)


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: The Innovations of William R Baarck

Introduction

William R Baarck is an accomplished inventor based in Fair Haven, NJ (US). He has made significant contributions to the field of chemical vapor deposition technology. His innovative approach has led to the development of a unique method and apparatus for depositing refractory thin films.

Latest Patents

William R Baarck holds a patent for a "Method and apparatus for depositing a refractory thin film by chemical." This invention provides a chemical vapor deposition reactor equipped with a rotatable and vertically movable susceptor/wafer carrier. The design allows for varying the plasma-substrate distance, which enhances deposition rates and minimizes damage to thin films. The ability to adjust the source-substrate distance offers greater flexibility compared to fixed dimensional systems. This innovation enables high-quality film growth in an atomic layer epitaxy mode.

Career Highlights

William R Baarck is associated with the US Government as represented by the Secretary of the Army. His work has been instrumental in advancing technologies related to thin film deposition. His expertise in this area has contributed to various applications in the field.

Collaborations

Some of his notable coworkers include Thomas R Aucoin and Richard H Wittstruck. Their collaboration has likely fostered an environment of innovation and technological advancement.

Conclusion

William R Baarck's contributions to the field of chemical vapor deposition have paved the way for advancements in thin film technology. His innovative methods and collaborative efforts continue to influence the industry positively.

Profile summary based on public USPTO records.
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