US Government As Represented by the Secretary of the Army

William R Baarck

Peter E Norris

Richard H Wittstruck

Thomas R Aucoin

Peter A Zawadzki

Jing Zhao

The present invention provides for a chemical vapor deposition reactor cher which is fitted with a rotatable and vertically movable susceptor/wafer carrier. The susceptor/wafer carrier, which is a large diameter disk, provides the reactor with the capability of varying the plasma-substrate distance. As those skilled in the art will appreciate, such a susceptor allows high deposition rates to be achieved for a given power level because the flux of the reactant can be increased due to the high speed rotation which will decrease boundary layer thickness during growth. The ability to adjust the source-substrate distance gives more flexibility than fixed dimensional systems. Further, it allows damage in the thin films to be minimized by simple adjustments to the susceptor/wafer carrier. Because the damage to the thin films is minimized, it makes pulsed operation practical and therefore, the films may be grown in an atomic layer epitaxy mode to produce films of high quality and uniformity.

Growing community of inventors

Fair Haven, NJ, United States of America

William R Baarck