Sugar Land, TX, United States of America

William Lawrence Soester

USPTO Granted Patents = 1 


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: William Lawrence Soester: Innovator in Offshore Structures

Introduction

William Lawrence Soester is an accomplished inventor based in Sugar Land, TX (US). He holds a patent for a unique offshore floating structure that showcases his innovative approach to engineering. His work has significant implications for the offshore drilling and production industry.

Latest Patents

Soester's notable patent is for a truss semi-submersible offshore floating structure. This design features a hull that includes four columns supported by two pontoons. The columns are responsible for supporting the topsides, while the topsides' structural framing serves as horizontal framing between the columns. A truss frame is attached to the columns, which preferably includes heave plates. This truss frame extends downward below the pontoons to minimize motions caused by environmental forces. The hull section and the truss space frame are constructed separately and then assembled at the offshore site where the structure is utilized for drilling and/or production.

Career Highlights

Soester is currently employed at J. Ray McDermott, S.A., where he applies his expertise in offshore engineering. His innovative designs contribute to advancements in the field, enhancing the efficiency and safety of offshore operations.

Collaborations

Soester collaborates with various professionals in his field, including his coworker Yun Ding. Their combined efforts aim to push the boundaries of offshore technology and improve structural designs.

Conclusion

William Lawrence Soester's contributions to offshore engineering through his patented designs demonstrate his commitment to innovation. His work continues to influence the industry and pave the way for future advancements in offshore structures.

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