Albuquerque, NM, United States of America

William L Warren

This inventor holds 11 USPTO granted patents. Top assignees: Sandia Corporation, France Telecom/cnet, Radiant Technologies, Inc.. Active years: 1987-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William L Warren. Retrieved from https://idiyas.com/inventor/william-l-warren-6tc62gvj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 8

Forward Citations = 134(Granted Patents)


Location History:

  • Charlotte, NC (US) (1987 - 1989)
  • Albuquerque, NM (US) (1996 - 2001)
  • Arlington, VA (US) (2000 - 2001)

Company Filing History:


Years Active: 1987-2001

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11 patents (USPTO):Explore Patents

Title: The Innovative Contributions of William L. Warren

Introduction

William L. Warren is a notable inventor based in Albuquerque, NM (US). He holds a total of 11 patents that showcase his expertise in the field of electrical engineering and memory technology. His inventions have significantly advanced the capabilities of sensing technologies and memory retention.

Latest Patents

Among his latest patents is an "Apparatus for sensing patterns of electrical field variations across a surface." This invention utilizes an array of nonvolatile field effect transistors to detect electric potential variations. The unique feature of these transistors is their nonvolatility, which is achieved through the movement of protons within the oxide layer in response to an externally applied electric potential. This technology allows for the sensing of fingerprints, handwriting, and optical images, converting them into digitized formats.

Another significant patent is the "Static ferroelectric memory transistor having improved data retention." This invention presents an improved ferroelectric FET structure that reduces retention loss by doping the ferroelectric layer. The structure includes a semiconductor layer with contacts, a bottom electrode, and a ferroelectric layer made from a perovskite structure. This innovative design enhances the stability of resistance measurements over time.

Career Highlights

William L. Warren has worked with various organizations, including Sandia Corporation, where he contributed to cutting-edge research and development in his field. His work has been instrumental in advancing technologies that have practical applications in various industries.

Collaborations

Throughout his career, Warren has collaborated with notable individuals such as Bruce A. Tuttle and Karel J. Vanheusden. These collaborations have fostered innovation and have led to the development of groundbreaking technologies.

Conclusion

William L. Warren's contributions to the field of electrical engineering and memory technology are significant. His innovative patents reflect his dedication to advancing technology and improving the functionality of electronic devices. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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