Plano, TX, United States of America

William J Vigrass


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 65(Granted Patents)


Company Filing History:


Years Active: 2006-2007

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2 patents (USPTO):Explore Patents

Title: The Innovations of William J. Vigrass

Introduction

William J. Vigrass is a notable inventor based in Plano, TX, who has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, Vigrass has demonstrated a commitment to advancing the capabilities of semiconductor devices.

Latest Patents

One of Vigrass's latest patents is for a vertically stacked semiconductor device. This innovative device includes a vertical assembly of semiconductor chips interconnected on a substrate. It features one or more metal standoffs that provide a fixed space between each supporting chip and the next vertically stacked chip. The fabrication process involves patterning islands of aluminum atop the passivation layer of each supporting chip while simultaneously forming bond pad caps. This method requires no additional cost and offers the advantage of providing standoffs for multiple chips by processing in wafer form, thus avoiding extra assembly costs. Additionally, the standoffs enhance thermal dissipation for the device and create a uniform, stable bonding surface for wire bonding each chip to the substrate.

Career Highlights

William J. Vigrass is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies in the semiconductor industry. His work has contributed to the advancement of efficient and cost-effective semiconductor solutions.

Collaborations

Vigrass collaborates with Kalyan Chakravarthy Cherukuri, further enhancing the innovative efforts at Texas Instruments Corporation.

Conclusion

William J. Vigrass is a prominent figure in the semiconductor field, known for his innovative patents and contributions to technology. His work continues to influence the industry and pave the way for future advancements.

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