Palo Alto, CA, United States of America

William F Kern


Average Co-Inventor Count = 1.8

ph-index = 6

Forward Citations = 201(Granted Patents)


Company Filing History:


Years Active: 1999-2014

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9 patents (USPTO):Explore Patents

Title: The Innovations of William F Kern

Introduction

William F Kern is a notable inventor based in Palo Alto, CA, with a significant contribution to the field of non-volatile memory devices. He holds a total of 9 patents, showcasing his expertise and innovative spirit in technology.

Latest Patents

Among his latest patents, Kern has developed methods and systems for the retargeting of a write operation retry in the event of a write operation failure. This invention focuses on utilizing data stored in an internal buffer within non-volatile memory devices, eliminating the need for a dedicated retry buffer at the system level. This advancement not only reduces system costs but also minimizes space consumption on circuit boards and limits latency associated with write retries. Another significant patent involves frequency distributed flash memory allocation based on free page tables. This system determines the writing rate of a system address and the current erase cycle state of each data block, assigning physical addresses to write operations accordingly. This approach enhances the robustness and reliability of non-volatile devices over time.

Career Highlights

Kern has worked with prominent companies in the technology sector, including Advanced Micro Devices Corporation and Spansion LLC. His experience in these organizations has contributed to his development of innovative solutions in memory technology.

Collaborations

Throughout his career, Kern has collaborated with talented individuals such as Stephan Rosner and Ralf Flemming, further enriching his work and contributions to the field.

Conclusion

William F Kern's innovative patents and career achievements highlight his significant role in advancing non-volatile memory technology. His work continues to influence the industry and improve device reliability.

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