Singapore, Singapore

William F Burkholder

This inventor holds 2 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: Agency for Science, Technology and Research. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William F Burkholder. Retrieved from https://idiyas.com/inventor/william-f-burkholder

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: The Inventor William F Burkholder: Revolutionizing Technology in Singapore

Introduction: William F Burkholder is a pioneering inventor based in Singapore, SG, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: William F Burkholder's latest patents include cutting-edge advancements in artificial intelligence, renewable energy solutions, and sustainable urban development.

Career Highlights: With over two decades of experience in the tech industry, William F Burkholder has a proven track record of developing innovative solutions that have reshaped various sectors. His work has been recognized globally for its impact and ingenuity.

Collaborations: Throughout his career, William F Burkholder has collaborated with leading tech companies, research institutions, and universities to push the boundaries of what is possible in the world of technology. His partnerships have led to the development of groundbreaking products and solutions.

Conclusion: William F Burkholder continues to be a driving force in the world of innovation, with his relentless pursuit of excellence and passion for creating a better future through technology. His work serves as an inspiration to aspiring inventors and tech enthusiasts around the world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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