Poughkeepsie, NY, United States of America

William C Heybruck, Deceased


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1983

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1 patent (USPTO):

Title: William C. Heybruck: Innovator in Reactive Ion Etching Technology

Introduction

William C. Heybruck was a notable inventor whose contributions to the field of semiconductor manufacturing have left a lasting impact. He was particularly recognized for his work on reactive ion etching technology, which is essential in the production of integrated circuits. His innovative designs have facilitated advancements in the efficiency and quality of semiconductor fabrication.

Latest Patents

Heybruck held a patent for a reactive ion etching chamber. This chamber structure is designed to provide operation with uniformity in electric field and generated plasma, ensuring uniform, contaminant-free etching over large batches of silicon wafers. The anode chamber structure is cylindrical and physically symmetrical with respect to a round cathode plate. The internal surfaces of the chamber are free of any apertures, holes, or recesses, having an opening dimension larger than one-tenth the thickness of plasma 'dark space'. Under normal reactive ion etching conditions, this opening dimension is 1.5 mm or less, and the distance between the cathode and anode internal surface is 3.0 mm or less. This innovation has significantly improved the etching process in semiconductor manufacturing.

Career Highlights

William C. Heybruck worked at International Business Machines Corporation (IBM), where he contributed to various projects that advanced technology in the semiconductor industry. His expertise in reactive ion etching has been instrumental in enhancing the manufacturing processes of silicon wafers.

Collaborations

Throughout his career, Heybruck collaborated with several talented individuals, including Brian H. Desilets and Thomas A. Gunther. These collaborations have fostered an environment of innovation and have led to significant advancements in the field.

Conclusion

William C. Heybruck's contributions to reactive ion etching technology have made a significant impact on the semiconductor industry. His innovative designs and collaborative efforts have paved the way for advancements that continue to benefit the field today.

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