The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1983
Filed:
May. 03, 1982
Brian H Desilets, Wappinger Falls, NY (US);
Thomas A Gunther, Hopewell Junction, NY (US);
William C Heybruck, deceased, late of Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A reactive ion etching chamber structure is designed to provide operation with uniformity in electric field and generated plasma so as to produce uniform, contaminant-free etching over large batches of silicon wafers. The anode chamber structure is cylindrical and physically symmetrical with respect to a round cathode plate with the internal surfaces of the chamber being free of any apertures, holes, recesses, or the like, having an opening dimension larger than one tenth the thickness of plasma 'dark space'. Under normal reactive ion etching conditions, such opening dimension is 1.5 mm or less and the distance between cathode and anode internal surface is 3.0 mm, or less.