William A McGee

Title: The Innovative Contributions of William A. McGee

Introduction

William A. McGee is a notable inventor based in Shrewsbury, MA (US). He has made significant contributions to the field of integrated circuits, particularly in the area of electrostatic discharge protection. His work has implications for the reliability and durability of electronic devices.

Latest Patents

William A. McGee holds a patent for an "Electro-static discharge protection device having a modulated control." This innovative circuit protects integrated circuit (IC) devices from damage due to electrostatic discharge (ESD). The protection circuit features an N-channel metal oxide semiconductor field effect transistor (MOSFET) clamping device and a gate modulation circuit. During normal operation, the gate modulation circuit disables the MOSFET clamp, allowing signal voltages to pass freely. However, during an ESD event, the circuit activates the MOSFET clamp to shunt harmful voltages to ground, ensuring the safety of the IC.

Career Highlights

William A. McGee has worked at Digital Equipment Corporation, where he has been able to apply his innovative ideas in a practical setting. His contributions have helped advance the technology used in integrated circuits, making them more robust against ESD events.

Collaborations

Throughout his career, McGee has collaborated with talented individuals such as Hamid Partovi and Kaizad R. Mistry. These collaborations have likely enriched his work and contributed to the development of effective solutions in the field of electronics.

Conclusion

William A. McGee's contributions to electrostatic discharge protection in integrated circuits highlight his innovative spirit and dedication to advancing technology. His patent serves as a testament to his expertise and the importance of protecting electronic devices from ESD damage.