Krailling, Germany

Werner Christoph


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: Werner Christoph: Innovator in MOS Device Technology

Introduction

Werner Christoph is a notable inventor based in Krailling, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for producing MOS transistors. His innovative approach has implications for the efficiency and performance of integrated circuits.

Latest Patents

Werner Christoph holds a patent for a method of making MOS devices using metal silicides or polysilicon. This invention relates to a method for producing MOS transistors with flat source/drain zones, short channel lengths, and a self-aligned contacting plane comprised of a metal silicide. The method allows for the production of NMOS, PMOS, and particularly CMOS circuits in VLSI technology. It enables a very high packing density and an independent additional wiring plane of very low resistance. He has 1 patent to his name.

Career Highlights

Werner Christoph has had a distinguished career, working at Siemens Aktiengesellschaft, a leading global technology company. His work has focused on advancing semiconductor technologies, which are crucial for modern electronic devices. His innovative methods have contributed to the efficiency and performance of various electronic applications.

Collaborations

Throughout his career, Werner Christoph has collaborated with esteemed colleagues, including Ulrich Schwabe and Franz Neppl. These collaborations have fostered an environment of innovation and have led to advancements in semiconductor technology.

Conclusion

Werner Christoph's contributions to the field of MOS device technology highlight his role as a key innovator in the semiconductor industry. His patented methods continue to influence the development of efficient and high-performance electronic circuits.

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